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Platform for in-plane ZT measurement and Hall coefficient determination of thin films in a temperature range from 120 K up to 450 K

Published online by Cambridge University Press:  27 October 2016

Vincent Linseis ,
Friedemann Völklein ,
Heiko Reith ,
Peter Woias  and
Kornelius Nielsch
Vincent Linseis*
Affiliation:
Institute of Nanostructure and Solid State Physics, Universität Hamburg, Hamburg 20355, Germany
Friedemann Völklein
Affiliation:
Institute for Microtechnologies, RheinMain University of Applied Sciences Wiesbaden, Ruesselsheim 65428, Germany
Heiko Reith
Affiliation:
Institute of Nanostructure and Solid State Physics, Universität Hamburg, Hamburg 20355, Germany; and Leibniz Institute for Solid State and Materials Research (IFW) Dresden, Dresden 01171, Germany
Peter Woias
Affiliation:
Department of Microsystems Engineering–IMTEK, University of Freiburg, Freiburg 79110, Germany
Kornelius Nielsch
Affiliation:
Institute of Nanostructure and Solid State Physics, Universität Hamburg, Hamburg 20355, Germany; and Leibniz Institute for Solid State and Materials Research (IFW) Dresden, Dresden 01171, Germany
*
a) Address all correspondence to this author. e-mail: vlinseis@physnet.uni-hamburg.de
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Abstract

The characterization of nanostructured samples with at least one restricted dimension like thin films or nanowires is challenging but important to understand their structure and transport mechanism and to improve current industrial products and production processes. We report on the development of a chip-based platform to simultaneously measure the in-plane electrical and thermal conductivity, the Seebeck coefficient as well as the Hall constant of a thin film in the temperature range from 120 K up to 450 K and in a magnetic field of up to 1 T. Due to the design of the setup, time consuming preparation steps can be omitted and a nearly simultaneous measurement of the sample properties is achieved. Typical errors caused by different sample compositions, varying sample geometries, and different heat profiles are avoided with the presented measurement method. As a showcase study displaying the validity and accuracy of our system, we present measurements of the thermoelectric properties of a 110 nm Bi87Sb13 thin film in the temperature range from 120 K up to 450 K.

Keywords

thermoelectricitythermal conductivitynanostructure

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Type
Invited Papers
Information
Journal of Materials Research , Volume 31 , Issue 20 , 28 October 2016 , pp. 3196 - 3204
Copyright
Copyright © Materials Research Society 2016 

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